These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.

FEATUREs:
• Collector–Emitter Voltage — VCEV = 1000 Vdc
• Fast Turn–Off Times
• 50 ns Inductive Fall Time — 100°C (Typ)
• 90 ns Inductive Crossover Time — 100°C (Typ)
• 900 ns Inductive Storage Time — 100°C (Typ)
• 100°C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents
• Extended FBSOA Rating Using Ultra–fast Rectifiers
• Extremely High RBSOA Capability

Typical Applications:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits