MJE3055 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min)
·High DC Current Gain-: hFE= 20-100@IC= 4A
·Complement to Type MJE2955
APPLICATIONS
·Designed for use in general-purpose amplifier and switching applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor