MJD32CQ データシート - Diodes Incorporated.
メーカー

Diodes Incorporated.
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
FEATUREs
• BVCEO > -100V
• IC = -3A high Continuous Collector Current
• ICM = -5A Peak Pulse Current
• Ideal for Power Switching or Amplification Applications
• Complementary NPN Type: MJD31CQ
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 ( Rev : 2014 )
Diodes Incorporated.
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252
Diodes Incorporated.
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 ( Rev : 2014 )
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 ( Rev : 2014 )
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)
Diodes Incorporated.
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK) ( Rev : 2018 )
Diodes Incorporated.
300V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)
Diodes Incorporated.