MJD112 データシート - KEC
メーカー
KEC
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
• High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
• Low Collector-Emitter Saturation Voltage.
• Straight Lead (IPAK, "L" Suffix)
• Complementary to MJD117/L.
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Cystech Electonics Corp.
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