MJ11032 データシート - Inchange Semiconductor
メーカー
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC= 25A
: hFE= 400(Min.)@IC= 50A
• Complement to Type MJ11033
APPLICATIONS
• Designed for use as output devices in complementary
general purpose amplifier applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
