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MJ11016 PDF
MJ11016 データシート - Zibo Seno Electronic Engineering Co.,Ltd
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Zibo Seno Electronic Engineering Co.,Ltd
DESCRIPTION
• Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
• Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
• Complement to the PNP MJ11015
APPLICATIONS
• Designed for use as output devices in complementary
general purpose amplifier applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor