MJ11013 データシート - New Jersey Semiconductor
メーカー
New Jersey Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
..designed for use as output devices in complementary general purpose amplifier applications.
FEATURES:
* High Gain Darlington Performance
* High DCCurrent Gain hFE = 1000(Min) @ lc = 20A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
Darlington Complementary Silicon Power Transistors ( Rev : 2016 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors ( Rev : 2007 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors
ON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
New Jersey Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Mospec Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Comset Semiconductors
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Mospec Semiconductor
