MGFK30V4045 データシート - MITSUBISHI ELECTRIC
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
● Internally impedance matched
● Flip-chip mounted
● High output power
P1dB = 1.1 W(TYP.) @ f = 14.0 ~ 14.5GHz
● High linear power gain
GLP = 8.0 dB(TYP.) @ f = 14.0 ~ 14.5GHz
● High power added efficiency
ηadd = 24%(TYP.) @ f = 14.0 ~ 14.5GHz
APPLICATION
For use in 14.0 ~ 14.5GHz-band amplifiers
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