MGF1951A-01 データシート - MITSUBISHI ELECTRIC
メーカー

MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
• High Gain and High Output Power GLP=9dB, P1dB=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
C-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
Low Noise/Medium Power GaAs MESFET Chip
Alpha Industries
Low Noise/Medium Power GaAs MESFET Chips
Alpha Industries
L/S BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
L&S BAND MEDIUM POWER GaAs MESFET
NEC => Renesas Technology
NPN MEDIUM POWER MICROWAVE TRANSISTOR
California Eastern Laboratories.
NPN MEDIUM POWER MICROWAVE TRANSISTOR
NEC => Renesas Technology
NPN MEDIUM POWER MICROWAVE TRANSISTOR
NEC => Renesas Technology
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR
NEC => Renesas Technology