部品番号
MGF1403B
コンポーネント説明
Other PDF
no available.
PDF
page
5 Pages
File Size
303.4 kB
メーカー

MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1403B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
FEATURES
● Low noise figure NFmin = 1.8 dB (MAX.) @ f = 12 GHz
● High associated gain Gs = 10.5 dB (MIN.) @ f = 12 GHz
● High reliability and stability
APPLICATION
S to Ku band low-noise amplifiers