部品番号
MGF1304A
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF1304A is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S- to Ku- band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
FEATURES
● Low noise figure NF = 1.7 (MAX.) @ f = 12 GHz
● High associated gain Gs = 8.5 dB (MIN.) @ f = 12 GHz
● High reliability and stability
APPLICATION
S- to Ku- band super-low-noise amplifiers.