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MCR8M データシート - Kersemi Electronic Co., Ltd.
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Kersemi Electronic Co., Ltd.
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.
• Blocking Voltage of 600 thru 800 Volts
• On–State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability — 80 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR8N, Date Code
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors ( Rev : 2008 )
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors ( Rev : 2001 )
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
Silicon Controlled Rectifiers Reverse Blocking Thyristors
Kersemi Electronic Co., Ltd.
Silicon Controlled Rectifiers Reverse Blocking Thyristors ( Rev : 2000 )
ON Semiconductor