MCH3105 データシート - ON Semiconductor
メーカー
ON Semiconductor
Features
• Adoption of FBET, MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
• High allowable power dissipation
Applicaitons
• DC / DC converters, relay drivers, lamp drivers, motor drivers, flash
Bipolar Transistor (–)30V, (–)3A, Low VCE(sat), (PNP)NPN Single MCPH3
ON Semiconductor
Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single MCPH3
ON Semiconductor
Bipolar Transistor –12V, –3A, Low VCE(sat), PNP Single MCPH3
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH6
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH3
ON Semiconductor
Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH3
ON Semiconductor
Bipolar Transistor –50V, –3A, Low VCE(sat), PNP Single MCPH6
ON Semiconductor
50V,3A PNP LOW VCE(SAT) TRANSISTOR ( Rev : 2011 )
Unisonic Technologies
-50V, -3A PNP LOW VCE(SAT) TRANSISTOR
Unisonic Technologies
50V, 3A NPN LOW VCE(SAT) TRANSISTOR
Unisonic Technologies
