
NEC => Renesas Technology
Description
The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128841 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
FEATUREs
• 16,777,216 words by 64 bits organization
• Clock frequency and access time from CLK
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single +3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD