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MBRS240LT3G(2013) データシート - ON Semiconductor

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部品番号
MBRS240LT3G

コンポーネント説明

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5 Pages

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98.1 kB

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ONSEMI
ON Semiconductor 

Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.


FEATUREs
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• ESD Ratings:
   ♦ Human Body Model = 3B (> 16000 V)
   ♦ Machine Model = C (> 400 V)
• NRVB Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• All Packages are Pb−Free*

Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Cathode Polarity Band
• Maximum Temperature of 260°C/10 Seconds for Soldering
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable


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