
ON Semiconductor
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
FEATUREs
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• ESD Ratings:
♦ Human Body Model = 3B (> 16000 V)
♦ Machine Model = C (> 400 V)
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• All Packages are Pb−Free*
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Cathode Polarity Band
• Maximum Temperature of 260°C/10 Seconds for Soldering
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable