SWITCHMODE™ Schottky Power Rectifier
POWERTAP III Package

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.

• Very Low Forward Voltage Drop
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• High dv/dt Capability

Mechanical Characteristics:
• Dual Die Construction
• Case: Epoxy, Molded with Plated Copper Heatsink Base
• Weight: 40 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant
• Base Plate Torques: See procedure given in the
   Package Outline Section
• Top Terminal Torque: 25−40 lb−in max.
• Shipped 50 units per foam
• Marking: MBRP30035L