部品番号
MBRB20100CT-E3
Other PDF
no available.
PDF
page
5 Pages
File Size
150.9 kB
メーカー
Vishay Semiconductors
HOME >>> Vishay Semiconductors >>> MBRB20100CT-E3 PDF
MBRB20100CT-E3 データシート - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
部品番号
コンポーネント説明
ビュー
メーカー
Dual Common-Cathode High-Voltage Schottky Rectifier
Bruckewell Technology LTD
Dual Common-Cathode High-Voltage Schottky Rectifier ( Rev : 2010 )
Vishay Semiconductors
Dual Common Cathode High Voltage Schottky Rectifier ( Rev : 2020 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
( Rev : 2008 )
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
( Rev : 2011 )
Vishay Semiconductors
Dual Common Cathode High Voltage Schottky Rectifier
( Rev : 2022 )
Vishay Semiconductors
Share Link: 