FEATURES
• Power supply voltage of 2.7 to 3.6 V
• High performance
   100 ns maximum access time
• Operating Temperature
   –20 to +85°C

— FLASH MEMORY
• Minimum 100,000 write/erase cycles
• Sector erase architecture
   One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words.
   Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
   MB84VA2102: Top sector
   MB84VA2103: Bottom sector
• Embedded EraseTM Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
   Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read in another sector within the same device
   Please refer to "MBM29LV160T/B" data sheet in detailed function

— SRAM
• Power dissipation
   Operating : 35 mA max.
   Standby : 50 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V