DESCRIPTION
The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 bit memory cells accessible in a 2×512K×16 bit / 2×256K×32 bit format. The MB81ES171625/173225 features a fully synchronous operation referenced to a positive edge clock same as that of SDRAM operation, whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
The MB81ES171625/173225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM).
The MB81ES171625/173225 is dedicated for SiP (System in a Package), and ideally suited for various embedded/consumer applications including digital AVs, and image processing where a large band width and low power consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.

FEATURES
• FCRAM core with Single Data Rate SDRAM
   interface
• 512 K word × 16 bit × 2 bank or 256 K word × 32 bit
   × 2 bank organization
• Single +1.8 V Supply ±0.15 V tolerance
• CMOS I/O interface
• Programmable burst type, burst length, and CAS latency
   Burst type : Sequential Mode, Interleave Mode
   Burst length : 1, 2, 4, 8, full column (64 : ×16 bit, 32 : ×32 bit)
   CAS latency
      MB81ES171625/173225-15-X
         CL = 1 (Min tCK = 30 ns, Max 33.3 MHz)
         CL = 2 (Min tCK = 15 ns, Max 66.7 MHz)
• 2 K refresh cycles every 4 ms
• Auto- and Self-refresh
• CKE power down mode
• Output Enable and Input Data Mask
• Burst Stop command at full column burst
• Burst read/write
• 66.7 MHz Clock frequency