GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

FEATURES
  Low VOS (VBE match): 40 µV typical, 100 µV maximum
  Low TCVOS: 0.5 µV/°C maximum
  High hFE: 500 minimum
  Excellent hFE linearity from 10 nA to 10 mA
  Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
  High breakdown: 45 V min

APPLICATIONS
  Weigh scales
  Low noise, op amp, front end
  Current mirror and current sink/source
  Low noise instrumentation amplifiers
  Voltage controlled attenuators
  Log amplifiers