M58MR016-ZCT データシート - STMicroelectronics
メーカー

STMicroelectronics
DESCRIPTION
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device supports synchronous burst read and asynchronous read from all the blocks of the memory array; at power-up the device is configured for page mode read. In synchronous burst mode, a new data is output at each clock cycle for frequencies up to 40MHz.
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
16 Mbit (1Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory
STMicroelectronics
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
64 Mbit (4Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory
STMicroelectronics
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
STMicroelectronics
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
STMicroelectronics
32 Mbit (2Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory
STMicroelectronics