Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

FEATUREs
Supply voltage
  –VDD= 2.7 V to 3.6 V for program, erase and read
  –VDDQ= VDDQIN= 2.4 V to 3.6 V for I/O buffers
  –VPP= 12 V for fast program (optional)
High performance
  – Access times: 70, 80 ns
  – 56 MHz effective zero wait-state burst read
  – Synchronous burst read
  – Asynchronous page read
Hardware block protection
  –WPpin for write protect of the 2 outermost parameter blocks and all main blocks
  –RPpin for write protect of all blocks
Optimized for FDI drivers
  – Fast program / erase suspend latency time < 6 µs
  – Common Flash interface
Memory blocks
  – 8 parameters blocks (top or bottom)
  – 31 main blocks
Low power consumption
  – 5 µA typical deep power-down
  – 60 µA typical standby for M58BW016DT/B
   150 µA typical standby for M58BW016FT/B
  – Automatic standby after asynchronous read
Electronic signature
  – Manufacturer code: 20h
  – Top device code: 8836h
  – Bottom device code: 8835h
100 K write/erase cycling + 20 years data retention (minimum)
High reliability level with over 1 M write/erase cycling sustained