LS3955(V2) データシート - Linear Integrated System
メーカー
Linear Integrated System
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
FEATURES
LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max.
LOW LEAKAGE IG=20pA TYP.
LOW NOISE en=10Nv/√Hz TYP.
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ( Rev : V3 )
Micross Components
Low Noise, Low Drift, Monolithic Dual N-Channel JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
