Mid-Infrared Light Emitting Diode, Flip-Chip Design

Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED23FC-PR-WIN has a stable ouput power and a lifetime more then 80000 hours.

FEATUREs
• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
• Peak Wavelength: typ. 2.35 µm
• Optical Ouput Power: typ. 0.8 mW qCW
• Package: TO-18, with PR and window