LED21FC データシート - Roithner LaserTechnik GmbH
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Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED21FC has a stable ouput power and a lifetime more then 80000 hours.
FEATUREs
• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
• Peak Wavelength: typ. 2.15 µm
• Optical Ouput Power: typ. 1.2 mW qCW
• Package: TO-18, with cap and window
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH