
SANYO -> Panasonic
Overview
The LE25FW203A is an onboard programmable flash memory device with a 256K×8-bit configuration. It uses a single 3.0V power supply and supports the serial interface. It has three erase functions depending on the size of memory area in which the data is to be erased: the chip erase function, the sector (64K bytes) erase function, and a page (256 bytes) erase function. A page program method is supported for data writing and it can program any amount of data from 1 to 256 bytes. The page program time depends on the number of bytes programmed and the IC provides a high-speed program time of 1.5ms (typ) when programming 256 bytes at one time. Moreover, equipped with a page write function that allows anywhere from 1 to 256 bytes of data in a page to be rewritten, this device is optimal for applications that perform smallscale rewriting.
FEATUREs
• Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range
• Operating frequency : 30MHz
• Temperature range : 0 to 70°C
• Serial interface : SPI mode 0, mode 3 supported
• Sector size : 256 bytes/page sector, 64K bytes/sector
• Page erase, sector erase, chip erase functions
• Page program function (1 to 256 bytes/page), Page write function (1 to 256 bytes/page)
• Hardware protect function (lower 256 pages)
• Hardware reset function
• Highly reliable read/write
Number of rewrite times : 105 times
Page erase time : 10ms (typ.), 20ms (max.), Number of rewrite times: 104 times or less
: 25ms (typ.), 300ms (max.), Number of rewrite times: 105 times or less
Sector erase time : 30ms (typ.), 500ms (max.)
Chip erase time : 200ms (typ.), 3s (max.)
Page program time : 1.5ms/256 bytes (typ.), 2.5ms/256 bytes (max.)
Page write time : 11ms (typ.), 22.5ms (max.), Number of rewrite times: 104 times or less
: 25ms (typ.), 300ms (max.), Number of rewrite times: 105 times or less
• Status functions
Ready/busy information
• Data retention period : 20 years
• Package : LE25FW203ATT MSOP8 (225mil)