L2SB1197KRLT1 データシート, Leshan Radio Company,Ltd L2SB1197KRLT1 PDF

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L2SB1197KRLT1 データシート - Leshan Radio Company,Ltd

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L2SB1197KRLT1

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Low Frequency Transistor PNP Silicon

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Leshan Radio Company,Ltd

FEATURE
● High current capacity in compact package.
IC = í0.8A.
● Epitaxial planar type.
● NPN complement: L2SD1781K
● Pb-Free Package is available.

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