KSC1009 データシート - Samsung
メーカー
Samsung
HIGH VOLTAGE AMPLIFIER
• High Collector-Base Voltage VCBO=160V
• Collector Current IC=700mA
• Collector Power Dissipation PC=800mW
• Complement to KSA709
Silicon NPN Epitaxial Transistor
Galaxy Semi-Conductor
Silicon NPN Epitaxial Transistor
Renesas Electronics
Silicon NPN Epitaxial Transistor
KEXIN Industrial
Silicon NPN Epitaxial Transistor
Renesas Electronics
SILICON EPITAXIAL NPN TRANSISTOR
Semelab - > TT Electronics plc
SILICON EPITAXIAL NPN TRANSISTOR ( Rev : 1996 )
Semelab - > TT Electronics plc
NPN Silicon epitaxial Transistor
Shenzhen Luguang Electronic Technology Co., Ltd
NPN Silicon Epitaxial Transistor
KEXIN Industrial
NPN Silicon Epitaxial Transistor
Semtech Electronics LTD.
NPN Silicon Epitaxial Transistor
KEXIN Industrial
