部品番号
K596
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Jiangsu Changjiang Electronics Technology Co., Ltd
K596 データシート - Jiangsu Changjiang Electronics Technology Co., Ltd
Jiangsu Changjiang Electronics Technology Co., Ltd
Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
PCM: 0.1W（ Tamb=25℃）
Gate Current
I G: 10mA
Drain current
I D: 1mA
Drain-Source voltage
BVGDO: -20 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
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