K184(1997) データシート - Toshiba
メーカー
Toshiba
PackageLOW NOISE AUDIO AMPLIFIER APPLICATIONS
• High |Yfs|: |Yfs| = 15 mS (Typ.) (VDS= 10 V, VGS= 0)
• High Breakdown Voltage: VGDS= −50 V
• Low Noise: NF = 1.0dB (Typ.)
(VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)
• High Input Impedance: IGSS= −1 nA (Max.) (VGS= −30 V)
• Small package
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
