J537 データシート - Toshiba
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Toshiba
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.)
High forward transfer admittance : |Yfs| = 3.5 S (typ.)
Low leakage current : IDSS = −100 μA (VDS = −50 V)
Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) ( Rev : 2014 )
Toshiba