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J496(2011) データシート - Renesas Electronics
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Renesas Electronics
Description
High speed power switching
FEATUREs
• Low on-resistance
RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4 V gate drive devices.
• Large current capacitance ID = –5 A
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Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
