J315 データシート - Toshiba
メーカー

Toshiba
DC−DC Converter
FEATURES
● 4− Volt gate drive
● Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.)
● High forward transfer admittance : |Yfs| = 3.0 S (typ.)
● Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
● Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba