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IXTA1R4N100P データシート - Inchange Semiconductor

IXTA1R4N100P image

部品番号
IXTA1R4N100P

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2 Pages

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268.5 kB

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Iscsemi
Inchange Semiconductor 

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤ 11.8Ω@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

• APPLICATION
• DC/DC Converter
• Switch-Mode and Resonant-Mode Power Supplies


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