IXTA1R4N100P データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
• FEATURES
• Static drain-source on-resistance:
RDS(on) ≤ 11.8Ω@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
• APPLICATION
• DC/DC Converter
• Switch-Mode and Resonant-Mode Power Supplies
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor