HiPerFET Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr

FEATUREs
•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Low cost
• Easy to mount
• Space savings
• High power density