HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt

FEATUREs
• Conforms to SOT-227B outline
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Low cost
• Easy to mount
• Space savings
• High power density