部品番号
IXFE180N10
コンポーネント説明
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IXYS CORPORATION
HiPerFET Power MOSFET
Single Die MOSFET
FEATUREs
• Conforms to SOT-227B outline
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier
APPLICATIONs
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density