IS65C51216AL(2009) データシート - Integrated Silicon Solution
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Integrated Silicon Solution
DESCRIPTION
The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 4.5V--5.5V Vdd
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40°C to +125°C)
• Lead-free available
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