IS61VF25636A(2005) データシート - Integrated Silicon Solution
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Integrated Silicon Solution
DESCRIPTION
The ISSI IS61LF/VF25636A and IS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VF: VDD 2.5V + 5%, VDDQ 2.5V + 5%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
• Lead-free available
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