IRLI510A データシート - Fairchild Semiconductor
メーカー

Fairchild Semiconductor
BVDSS = 100 V
RDS(on) = 0.44Ω
ID = 5.6 A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V
♦ Lower RDS(ON): 0.336Ω (Typ.)
Page Link's:
1
2
3
4
5
6
7
8
9
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor