IRG7PH35UD1PBF データシート - International Rectifier
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International Rectifier
Features
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low VFDiode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for ILM
• Positive VCE (ON) Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS ( Rev : 2013 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS ( Rev : 2010 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies