IRG4BC30FDPBF データシート - International Rectifier
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International Rectifier
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
FEATUREs
• Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
• Lead-Free
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
International Rectifier