IRFBC42 データシート - Harris Semiconductor
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Harris Semiconductor
Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
Features
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
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6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Intersil
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
Harris Semiconductor
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Intersil
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
Intersil
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
Intersil
6.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Intersil
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Intersil