DESCRIPTION
The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
   
FEATURES
● RDS(ON) = 1.00Ω @ VGS = 10V
● Ultra low gate charge(22nC Max.)
● Low reverse transfer capacitance
    (CRSS = 4pF typical)
● Fast switching capability
● 100% avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature