部品番号
IRF630
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STMicroelectronics
IRF630(1999) データシート - STMicroelectronics
STMicroelectronics
N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET
DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.35 Ω
■ EXTREMELY HIGH dV/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
部品番号
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