部品番号
IRF233
コンポーネント説明
Other PDF
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PDF
page
5 Pages
File Size
211.9 kB
メーカー

Samsung
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fsat switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (Standard)