IIPA037N08N3 データシート - Inchange Semiconductor
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Inchange Semiconductor
• DESCRITION
• Device for use in a wide variety of applications
• FEATURES
• Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max)
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor