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IDV05S60C データシート - Infineon Technologies

IDV05S60C image

部品番号
IDV05S60C

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page
10 Pages

File Size
1.2 MB

メーカー
Infineon
Infineon Technologies 

Description
The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already boad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying it´s new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package.


FEATUREs
• Revolutionary semiconductor material - Silicon Carbide
• Nearly no reverse / forward recovery charge
• High surge current capability
• Fully isolated package with nearly similar Rth,jc as the standard T0220
• Suitable for high temperature operation
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Switching behavior independent of forward current, switching speed and temperature


Benefits
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Good thermal performance without the need for additional isolation layer and washer
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures and less fans
• Reduced EMI


APPLICATIONs
   Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS


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