IDD04S60C データシート - Infineon Technologies
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Infineon Technologies
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
thinQ! 2G Diode specially designed for fast switching applications like:
• SMPS e.g.; CCM PFC; typ Pout= 400 - 800W
• Motor Drives; Solar applications; UPS
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!® SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2009 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies