IDB12E120 データシート - Infineon Technologies AG
メーカー
Infineon Technologies AG
Feature
• 1200 V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
• Qualified according to JEDEC0) for target applications
* RoHS Compliant
Fast Switching Emitter Controlled Diode
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode
Infineon Technologies
Fast Switching Emitter Controlled Diode
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
